The electric double layer space charge p-n-transition, depleted of mobile charge carriers, It has a finite thickness and can be considered as a plate capacitor with capacitance \(C=frac{\varepsilon varepsilon _{0}S}{\delta }\) (2.11) where ε0 - electric constant; ε- dielectric constant of the semiconductor; δ - transition width. Width… Continue Reading
When deriving the equation I = I0(exp(U/φT) – 1) We do not take into account such things, termogeneratsiya as a carrier in the closing transition layer, surface leakage current, the voltage drop across the resistance of neutral areas of the semiconductor, and under certain conditions the breakdown voltages of regional. Therefore, the experimental current-voltage characteristics of p-n-transition… Continue Reading
Volt-ampere characteristics (CVC) It is a graph of current in the external circuit p-n-transition from the value and polarity of the voltage, applied to him. This relationship may be obtained experimentally or calculated based on the voltage-current characteristic equation [2]. When the p-n-transition in the forward direction… Continue Reading
When the p-n-transition apply external voltage u, the balance between diffusion and drift streams in transit and broken through the entire structure will leak current I = Jdif - Jprov. We assume, that almost all the external voltage falls to the p-n-junction and… Continue Reading
At the heart of the majority of semiconductor diodes and transistors is the contact of two semiconductors with different types of conductivity. It can be prepared, For example, by diffusion of a donor impurity in the p-type semiconductor. Idealized dimensional structure p-n-transition is shown in Figure. 2.1, (a). Consider the physical processes in the… Continue Reading