The actual current-voltage characteristic of p-n-transition

When deriving the equation I = I0(exp(U/φT) – 1) We do not take into account such things, termogeneratsiya as a carrier in the closing transition layer, surface leakage current, the voltage drop across the resistance of neutral areas of the semiconductor, and under certain conditions the breakdown voltages of regional. Therefore, the experimental current-voltage characteristics of p-n-transition… Continue Reading