Thyristors

KU101 KU102 KW103 KU104 KU105 KU108
KW109 KU110 KU111 KU113 KU120 KU120-5
KU121 KU201 KU202 KW203 KU204 KU208
KU221 KW222 KU224 KU228 KW239 KU240
KU501 KU502 KU503 KU601 KU606 KU610
KU701 KU702 KU706 KU901 KU210 KU215
KU216 KU218 KU219 KU220 KN102 D235
KU210 KU211 KU215 KU218 KU219 KU220
TS2-10 TS2-16 TS2-25 TS2-40 TS2-50 TS2-63
TS2-80 TS80 TS125 TS160 TS112-10 TS112-16
TS122-20 TS132-40 TS132-50 TS142-63 TS142-80 TS161-100
TS161-125 TS161-160 TO125-12,5 TO132-25 TO132-40 TO142-50
TO142-63 TO142-80 T112-10 T112-16 T122-20 T122-25
T222-20 T222-25 T131-40 T131-50 T132-16 T132-25
T232-16 T232-25 T132-40 T132-50 T232-40 T232-50
T141-40 T141-50 T141-63 T141-80 T142-32 T142-40
T142-50 T242-32 T242-40 T242-50 T142-63 T142-80
T242-63 T242-80 T151-63 T151-80 T152-63 T152-80
T252-63 T252-80 T151-100 T161-125 T161-160 T171-200
T171-250 T171-320 T123-200 T123-250 T123-320 T133-320
T133-400 T143-400 T143-500 T143-630 T153-630 T153-800
T253-800 T353-800 T253-1000 T253-1250 T173-1250
D238
Parameters symmetrical thyristors

Letter designations thyristors parameters

according to GOST 15133-77 switching semiconductor devices bistable, having three or more p-n junctions, collectively called thyristors.

Thyristors operate as keys in pulsed mode with currents, far exceeding the permissible constant currents in the open state. Designed for use in the electric power converter circuit, pulse modulators, contactless control apparatus, polling and pulse amplifiers, harmonic oscillation generators, inverters and other circuits, performing switching functions.

The main parameters of thyristors, established by GOST 20332-84, Options include the maximum allowable mode in the closed state, Reverse nonconducting state, in the open position and the control circuit, as well as the dynamic and thermal parameters:

  • constant off-state voltage in thezs – the greatest forward voltage, which can be applied to the device and in which it is in a closed condition;
  • non-repeating pulse off-state voltage in thezs, np – the highest instantaneous voltage value of any non-repeating on the anode, does not cause it to switch from the closed state into the open;
  • continuous reverse voltage in theCountdown – major stress, which can be applied to the device in the opposite direction;
  • the reverse breakdown voltage in thesamples – reverse voltage device, wherein the reverse current reaches a predetermined value;
  • switching voltage in thePRK – forward voltage, corresponding switching point (inflection current-voltage characteristics);
  • voltage in the open state in theaxis – the voltage drop across the thyristor in the open state;
  • surge voltage in the open state in theaxis, and – the highest instantaneous value of the on-state voltage, due to the pulse current in the open state setpoint;
  • pulse trigger voltage in thefrom, and – the lowest amplitude pulse direct voltage, providing switching (dinistora, thyristors) from the closed state into the open;
  • permanent unlocking control voltage in thein, from – the voltage between the control electrode and cathode of SCR, corresponding to the gate-constant current control;
  • unlocking impulse control voltage in thein, from, and – the pulse voltage on the control electrode, corresponding pulse Gate Trigger Current;
  • neotpirayuschee constant control voltage in thein, not – highest DC voltage on the control electrode, causing the switch SCR from the closed state into the open;
  • repetitive pulse voltage in the closed state in thezs, P – the highest instantaneous voltage value is in the closed position, applied to the thyristor, including only repetitive transient voltages;
  • repeating pulse voltage in theCountdown,P – the highest instantaneous voltage value reverse, applied to the thyristor, including only repetitive transient voltages;
  • locking constant control voltage in thein,with – constant voltage control thyristor, corresponding locking constant current control;
  • locking the pulsed control voltage in thein,with, and – pulse voltage thyristor control, corresponding locking control current;
  • unclosable DC voltage in thein, NZ – most constant control voltage, not calling off thyristor;
  • threshold voltage in theERP – value thyristor voltage, defined by the point of intersection of a straight line approximating the open state voltage characteristics with axis;
  • DC closed Izs – on-state current at a specific forward voltage;
  • the average current in the open state Iaxis, cf. – period average value of the current in the open state;
  • constant reverse current ICountdown – reverse anode current at a certain value of the reverse voltage;
  • switching current IPRK – current through the thyristor at the time of switching (in thePRK and IPRK indicated only for dinistorov);
  • repetitive peak current in the open state Iaxis,P – the highest instantaneous current value in the open state, including all repetitive transient currents;
  • surge current in the open state Iaxis, exercise – the largest surge current in the open state, which causes the flow of excess allowable junction temperature, but the impact of which for the time period of the thyristor service is expected with a limited number of repetitions;
  • DC current in the open state Iaxis – the greatest current value in the open state;
  • repetitive peak current in the open state Iaxis,P – the highest instantaneous current value in the open state, including all repetitive transient currents;
  • repetitive peak current in the closed state Izs,P – Pulse on-state current, due to repetitive pulse voltage in the closed state;
  • repeating pulse reverse current ICountdown,P – reverse current, due to repeat- schimsya peak reverse voltage;
  • unlocking constant current control Iin,from – the smallest constant current control, necessary to enable the thyristor (from the closed state into the open);
  • Gate Trigger Current Iin,from, and – the smallest pulse control current, necessary to enable the thyristor;
  • locking pulse current control Iin,with,and – the highest pulse current control, does not cause the thyristor switch;
  • holding current Ibeats – the smallest direct current thyristor, required to maintain the thyristor in the open state;
  • current inclusions thyristor Iincluding – smallest main current, required to maintain the thyristor in the open state after the pulse current control after the switching of the thyristor from the closed state to the open;
  • zapiraemыy current thyristors Iwith – the greatest value of the main current, wherein the locking is provided on the control electrode of the thyristor;
  • the average power dissipation Pcf. – the sum of the average power, scattered thyristors;
  • on time of the thyristor tin, including , twith, including – time interval, during which the thyristor is turned or unlocking control current is switched from the closed state to the open unlocking pulse current;
  • rise time tin, pnr , tnr – the time interval between the instant, when the main voltage is reduced to a predetermined value, and the moment, when it reaches a predetermined low value when the thyristor current control unlocking or unlocking switching pulse voltage;
  • off-time toff – the smallest time interval between the instant, when the main thyristor current after an external switch main chains decreases to zero, and the moment, in which a certain mains voltage passes through zero without switching thyristor;
  • slew closed critical speed (in thezs /dt)cr – the greatest value of slew rate in the closed state, which does not cause the thyristor switches from the closed state into the open;
  • critical rate of rise of the switching voltage (in thezs /dt)ball – the greatest value of the main voltage slew rate, which in the open state or the reverse conducting state in the opposite direction after the load current does not cause the thyristor to switch from the closed state to the open.

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